发明名称 MAGNETORESISTIVE SENSOR AND MANUFACTURING METHOD THEREFOR
摘要 <p>A magnetoresistive sensor (14) including a lower electrode layer (16), a nanotube structure film (18) composed of an insulator matrix (20) and a plurality of nanotubes (22) dispersively arranged in the insulator matrix (20), a magnetoresistive film (28) provided on the nanotube structure film (18), and an upper electrode layer (30) provided on the magnetoresistive film (28). Each nanotube (22) is composed of a circular tubular nonmetal (24) and a circular cylindrical metal (26) surrounded by the circular tubular nonmetal (24). The nanotube structure film (18) is partially etched at its central region to make conduction of the upper electrode layer (30) and the lower electrode layer (16) through the magnetoresistive film (28) and the circular cylindrical metal (26) of each nanotube (22) present at the central region. <IMAGE></p>
申请公布号 KR100797590(B1) 申请公布日期 2008.01.24
申请号 KR20020013493 申请日期 2002.03.13
申请人 发明人
分类号 G11B5/39;G01R33/09;H01L21/3205;H01L21/768;H01L23/52;H01L23/522;H01L43/08;H01L43/12;(IPC1-7):G11B5/39 主分类号 G11B5/39
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