METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

A method for manufacturing a semiconductor device is provided to ensure the reliability of electric characteristics by preventing the diffusion of metal of a gate electrode to a gate insulation layer. A first oxide layer, a nitride layer, and a second oxide layer are sequentially stacked on a substrate. A conductive layer including metal is formed on the second oxide layer. By reacting the second oxide layer and conductive layer, the second oxide layer is converted into a metal oxide layer. By patterning the first oxide layer, nitride layer, metal oxide layer, and conductive layer, a gate structure is formed. The first and second oxide layers include silicon oxide material. The nitride layer includes nitride material.