发明名称 CHARGED PARTICLE BEAM MICROSCOPIC METHOD, AND CHARGED PARTICLE BEAM DEVICE
摘要 PROBLEM TO BE SOLVED: To measure and to correct with high accurately the geometric strain in an optional magnification, in a charged particle beam microscopic device. SOLUTION: A geometric strain in the first magnification is measured as an absolute strain, based on a standard sample having a periodic structure. A fine structure sample is photographed in the first magnification, with which the geometric strain is measured and in a second magnification with which the geometric strain is not measured. An expanded/contracted image, determined by expanding/contracting in an isotropic way the image in the first magnification up to the image in the second magnification is generated. Geometric strain in the second magnification is measured as relative strain, based on the expanded/contracted image. An absolute strain in the second magnification is determined, from the absolute strain in the first magnification and the relative strain in the second magnification. Thereafter, relative strain measurement is repeated, by replacing the second magnification with the first magnification, to thereby measure and correct the geometric strains at an arbitrary magnification. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008014850(A) 申请公布日期 2008.01.24
申请号 JP20060187385 申请日期 2006.07.07
申请人 HITACHI HIGH-TECHNOLOGIES CORP 发明人 TOKIDA RURIKO;TAKAGUCHI MASANARI;INADA HIROMI
分类号 G01B15/04;H01J37/147;H01J37/153;H01J37/22;H01J37/26;H01J37/28;H01L21/66 主分类号 G01B15/04
代理机构 代理人
主权项
地址