发明名称 ETCHING APPARATUS AND METHOD
摘要 PROBLEM TO BE SOLVED: To provide an etching apparatus which can quickly discharge reactive particles remaining in the interior of a pattern, and can prevent isotropic etching caused by excessive supply of a reactive seed while eliminating a dependency on a processing shape, and also to provide an etching method in the etching apparatus. SOLUTION: The etching apparatus comprises a reaction chamber 6, a specimen holder means 5 provided within the reaction chamber 6 for holding a specimen 7 to be etched, a plasma generation means for generating a discharge plasma 8 in the reaction chamber 6, a high frequency power application means 9 for applying a high frequency power to the specimen held in the specimen holder means 5, and a means for cyclically changing the high frequency power applied to the specimen 7 by the high frequency power application means 9 during the etching operation. The specimen holder means 5 has a means for vertically vibrating the specimen 7 by establishing a synchronism with the cyclical change of the high frequency power. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008016585(A) 申请公布日期 2008.01.24
申请号 JP20060185187 申请日期 2006.07.05
申请人 KAWASAKI MICROELECTRONICS KK 发明人 SUZUKI YASUTSUGU
分类号 H01L21/3065 主分类号 H01L21/3065
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