| 摘要 |
Storage circuits ( 180 - 183 and 280 - 281 ) may be used for low power operation while allowing fast read access. In one embodiment (e.g. circuit 100 ), shared complementary write bit lines ( 101, 102 ), separate read bit lines ( 103 - 106 ), a shared read word line ( 107 ), and separate write word lines ( 108 - 111 ) are used. In an alternate embodiment (e.g. circuit 200 ), shared complementary write bit lines ( 201, 202 ), a shared read bit line ( 203 ), separate read word lines ( 206 - 207 ), and separate write word lines ( 208 - 209 ) are used. The storage circuit may be used in a variety of contexts, such as, for example, a register file ( 17 ), a branch unit ( 15 ), an SRAM ( 19 ), other modules ( 20 ), a cache ( 18 ), a buffer ( 21 ), and/or a memory ( 14 ).
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