| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To attain a speed increase of a sensing period and a capacity enlargement in fuse macro of an OTP memory for storing data so as to be nonvolatile by applying a high voltage to a MOS structured e-Fuse element and destroying an insulation film of this element. <P>SOLUTION: For instance, the e-Fuse elements 11 are respectively arranged in memory cells FC00, FC01, ..., FC11. A gate electrode of each e-Fuse element 11 is connected to a data line 13 through a first selection transistor 12 to be used only at the programming and also being connected to a data line 15 through a second selection transistor 14 to be used at the programming and sensing. A source-drain and well of the e-Fuse element 11 are connected to a row selection line 20 to be applied by a non-rating high voltage during programming. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
