发明名称 Voltage booster for semiconductor device and semiconductor memory device using same
摘要 A semiconductor device has a power-saving mode and a normal mode. A voltage booster within the semiconductor device responds to the normal mode and the power-saving mode by controlling various internal operating voltages of the semiconductor device using a level shifter, an internal voltage booster, and a voltage boosting circuit. The initial voltage booster is configured to transmit an external power supply voltage through an initial boosting node to a voltage boosting terminal in response to the level shifter output signal during the normal mode, and to block transmission of the external power supply voltage to the initial boosting node to decrease a voltage level of the initial boosting node during the power-saving mode.
申请公布号 US2008018381(A1) 申请公布日期 2008.01.24
申请号 US20070730651 申请日期 2007.04.03
申请人 SHIN CHANG-HO 发明人 SHIN CHANG-HO
分类号 G05F1/10;G11C5/14 主分类号 G05F1/10
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