| 发明名称 |
Low-Temperature-Grown (Ltg) Insulated-Gate Phemt Device and Method |
| 摘要 |
A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.
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| 申请公布号 |
US2008017844(A1) |
申请公布日期 |
2008.01.24 |
| 申请号 |
US20050632670 |
申请日期 |
2005.12.01 |
| 申请人 |
NICHOLS KIRBY B;ACTIS ROBERT;XU DONG;KONG WENDELL M |
发明人 |
NICHOLS KIRBY B.;ACTIS ROBERT;XU DONG;KONG WENDELL M. |
| 分类号 |
H01L29/24;H01L21/338;H01L29/739 |
主分类号 |
H01L29/24 |
| 代理机构 |
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