| 摘要 |
As a cathode foil, an etched aluminium foil is used, where a TiN film is prepared on the surface thereof by cathode arc plasma deposition process. As an anode foil, an etched aluminium foil is used, where a dielectric film is prepared on the surface thereof by a formation process. Winding together the anode foil along with the cathode foil and a separator, a capacitor element is prepared. While placing an organic semiconductor comprising a desired TCNQ complex salt in a bottomed cylindrical aluminium case and melting the TCNQ complex salt under heating on a heater heated to about 300 DEG C, then, the capacitor element heated to about 250 DEG C is placed in the aluminium case, to impregnate the capacitor element with the melted TCNQ complex salt and immediately immerse the aluminium case in cooling water to cool and solidify the TCNQ complex salt. Then, the capacitor element is sealed with a resin to prepare a solid electrolytic capacitor. |
