| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an exposure apparatus that effectively removes particles that have attached to the patterned surface of a mask to actualize excellent exposure characteristics. <P>SOLUTION: An exposure apparatus exposes a substrate to light to form the pattern of a mask, which is located in a vacuum or reduced-pressure atmosphere and has a multilayer film in which at least molybdenum layer and silicon layer are laminated, on the substrate. The exposure apparatus comprises a laser irradiation unit for irradiating the mask with a pulsed laser beam that has a wavelength of 200 nm or less. <P>COPYRIGHT: (C)2008,JPO&INPIT |
