发明名称 |
Semiconductor Device With A High Thermal Dissipation Efficiency |
摘要 |
A semiconductor device having a higher thermal dissipation efficiency comprises a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.
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申请公布号 |
US2008017978(A1) |
申请公布日期 |
2008.01.24 |
申请号 |
US20070852317 |
申请日期 |
2007.09.09 |
申请人 |
BRUNSCHWILER THOMAS J;DESPONT MICHEL;LANTZ MARK A;MICHEL BRUNO;VETTIGER PETER |
发明人 |
BRUNSCHWILER THOMAS J.;DESPONT MICHEL;LANTZ MARK A.;MICHEL BRUNO;VETTIGER PETER |
分类号 |
H01L23/34;H01L21/44;H01L21/48;H01L23/367 |
主分类号 |
H01L23/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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