发明名称 Semiconductor Device With A High Thermal Dissipation Efficiency
摘要 A semiconductor device having a higher thermal dissipation efficiency comprises a thermally conducting structure attached to a surface of the semiconductor device via soldering. The thermally conducting structure is essentially formed of a thermally conducting material and comprises an array of freestanding fins, studs or frames, or a grid of connected fins. A process for fabricating such a semiconductor device includes forming a thermally conducting structure on a carrier and attaching the thermally conducting structure formed on the carrier to a surface of the semiconductor device via soldering.
申请公布号 US2008017978(A1) 申请公布日期 2008.01.24
申请号 US20070852317 申请日期 2007.09.09
申请人 BRUNSCHWILER THOMAS J;DESPONT MICHEL;LANTZ MARK A;MICHEL BRUNO;VETTIGER PETER 发明人 BRUNSCHWILER THOMAS J.;DESPONT MICHEL;LANTZ MARK A.;MICHEL BRUNO;VETTIGER PETER
分类号 H01L23/34;H01L21/44;H01L21/48;H01L23/367 主分类号 H01L23/34
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