发明名称 |
Inp Single Crystal Wafer and Method for Producing Inp Single Crystal |
摘要 |
A method for producing a low-dislocation InP single crystal suitably used for an optical device such as a semiconductor laser, and the low-dislocation InP single crystal wafer are provided. In a liquid-encapsulated Czochralski method in which a semiconductor raw material and an encapsulant are contained in a raw material melt containing part comprising a cylindrical crucible having a bottom, the raw material containing part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw material in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised; a crystal shoulder part is grown from the seed crystal by setting a temperature gradient in a crystal growth direction to 25° C./cm or less and setting a temperature-fall amount to 0.25° C./hr or more. Thus, an iron-doped or undoped InP single crystal wafer in which an area having a dislocation density of 500/cm<SUP>2 </SUP>or less occupies 70% or more is realized.
|
申请公布号 |
US2008019896(A1) |
申请公布日期 |
2008.01.24 |
申请号 |
US20060587698 |
申请日期 |
2006.10.26 |
申请人 |
NODA AKIRA;HIRANO RYUICHI |
发明人 |
NODA AKIRA;HIRANO RYUICHI |
分类号 |
C30B15/00;C01B25/00;C30B15/22;C30B27/02;C30B29/40 |
主分类号 |
C30B15/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|