发明名称 Wafer level package for surface acoustic wave device and fabrication method thereof
摘要 A wafer level package for a surface acoustic wave device (100) and a fabrication method thereof include a SAW device (110) formed with a SAW element (112) on an upper surface of a device wafer (111); a cap wafer (120) joined on an upper part of the SAW element; a cavity part (130) housing the SAW element between the cap wafer and the SAW device; a cap pad (121) formed on an upper surface of the cap wafer; and a metal line (122) formed to penetrate through the cap wafer to electrically connect the cap pad and the SAW element, the device wafer and the cap wafer being made of the same materials.
申请公布号 EP1783902(A3) 申请公布日期 2008.01.23
申请号 EP20060013871 申请日期 2006.07.04
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LIM, JI-HYUK;HWANG, JUN-SIK;KIM, WOON-BAE;HAM, SUK-JIN;KWON, JONG-OH;LEE, MOON-CHUL;MOON, CHANG-YOUL
分类号 H03H9/10;H01L41/09;H01L41/18;H01L41/22;H01L41/23;H01L41/29;H03H3/08;H03H9/25 主分类号 H03H9/10
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