Systems and methods for direct silicon epitaxy thickness measuring

摘要

Systems and methods for measuring thickness of an epitaxial layer (26) grown on a silicon wafer (20) An oxide layer (22) is generated on a side of the silicon wafer (20). One or more posts of oxide (24) are created from the oxide layer (22) by masking and removing unwanted oxide. An epitaxial layer (26) is grown on the side of the silicon wafer (20) over the one or more oxide posts (24). The epitaxial layer (26) is removed in an area that includes at least the epitaxial layer (26) grown on the one or more oxide posts (24). Then, the one or more oxide posts are removed (24). The thickness of the epitaxial layer (26) is determined by measuring a distance along an axis between a surface (32) of the silicon wafer (20) where one of the one or more oxide posts (24) previously attached and a top surface (30) of the epitaxial layer (26), the axis being perpendicular to the surface (32) of the wafer (20).