发明名称 TFT ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE USING THE SAME
摘要 A TFT(Thin Film Transistor) array substrate, a manufacturing method thereof, and a display device using the same are provided to form a transparent conductive layer along the direction for installing a source line, thereby achieving the high yield. A gate electrode(1) is installed at a substrate. A gate insulating layer is formed on the gate electrode. A semiconductor layer(23) is formed on the gate electrode and arranged oppositely to a surface of the gate electrode. A source electrode(11b) and a drain electrode are constructed by a transparent conductive layer formed on the semiconductor layer. A pixel electrode(11a) is extended from the drain electrode and formed as a transparent conductive layer. An interfacial insulating layer(8) is formed on the pixel electrode, the source electrode, and the drain electrode and has a contact hole reached to the source electrode. A source line is formed on the interfacial insulating layer and connected with the source electrode through the contact hole. The source line includes Al, Ag or Cu.
申请公布号 KR20080008240(A) 申请公布日期 2008.01.23
申请号 KR20070070393 申请日期 2007.07.13
申请人 MITSUBISHI ELECTRIC CORPORATION 发明人 NAGAYAMA KENSUKE;ISHIGA NOBUAKI
分类号 G02F1/136 主分类号 G02F1/136
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