GAS COMPOSITIONS FOR CLEANING THE INTERIORS OF REACTORS AS WELL AS FOR ETCHING FILMS OF SILICON-CONTAINING COMPOUNDS,申请号EP20010970182-传众专利搜索

发明名称	GAS COMPOSITIONS FOR CLEANING THE INTERIORS OF REACTORS AS WELL AS FOR ETCHING FILMS OF SILICON-CONTAINING COMPOUNDS
摘要	<p>A gas composition, for cleaning the interior of CVD chambers or etching a thin film comprising a silicon-containing compound or compounds, comprises FNO and further comprises O 2 and/or one or more inert gases.</p>
申请公布号	EP1320875(A4)	申请公布日期	2008.01.23
申请号	EP20010970182	申请日期	2001.09.21
申请人	TOKYO ELECTRON LIMITED;RENESAS TECHNOLOGY CORP.;NEC ELECTRONICS CORPORATION;MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.;DAIKIN INDUSTRIES, LTD.;ANELVA CORPORATION;SANYO ELECTRIC CO., LTD.;HITACHI KOKUSAI ELECTRIC INC.;SONY CORPORATION;KANTO DENKA KOGYO CO., LTD.;NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCEAND TECHNOLOGY	发明人	SEKIYA, AKIRA;FUKAE, KATSUYA;MITSUI, YUKI;TOMIZAWA, GINJIRO
分类号	H01L21/205;B08B7/00;C09K13/00;C09K13/08;C23C16/44;C23F4/00;H01L21/3065;H01L21/311;H01L21/3213	主分类号	H01L21/205
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