发明名称 |
Method of producing bonded wafer |
摘要 |
<p>There is provided a method of producing a bonded wafer by bonding two silicon wafers for active layer and support layer to each other and then thinning the wafer for active layer, in which nitrogen ions are implanted from the surface of the wafer for active layer to form a nitride layer in the interior of the wafer for active layer before the bonding.
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申请公布号 |
EP1870930(A3) |
申请公布日期 |
2008.01.23 |
申请号 |
EP20070011061 |
申请日期 |
2007.06.05 |
申请人 |
SUMCO CORPORATION |
发明人 |
NISHIHATA, HIDEKI;MORIMOTO, NOBUYUKI;ENDO, AKIHIKO |
分类号 |
H01L21/762 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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