APPARATUS FOR PLASMA PROCESS

摘要

A plasma processing apparatus is provided to load a wafer on a proper position of a pedestal by installing a sensing unit at a periphery of the pedestal. A chamber(110) is formed to perform a wafer process. A pedestal(140) is arranged at a lower of the chamber. A wafer(W) is loaded on the pedestal. One and more or two and more sensing units(150) are positioned along a periphery of the pedestal. The sensing units sense an edge of one side of the wafer and detect whether an edge of the other side of the wafer is positioned on the pedestal. A plasma processing apparatus has a relationship of r2 >r1 when the pedestal has a diameter of r1 and the wafer has a diameter of r2.