| 摘要 |
A method for forming a semiconductor device is provided to reduce a process cost, to enhance reliability and to increase productivity by using an existing exposure apparatus having a low resolution. An isolation layer(130) is formed on a semiconductor substrate(100) to define an active region(120). A gate material layer is formed on the entire surface of the semiconductor substrate. A first photoresist pattern is formed on the gate material layer to expose a C-Hall region. The gate material layer of the C-Halo region is etched by using the first photoresist pattern as a mask. A C-Halo ion implantation process is performed on an etched region of the gate material layer. The gate material layer is removed from an upper part of a C-Halo ion implantation region by using a first photoresist pattern mask. A second photoresist pattern(175) is formed on the entire surface of the semiconductor substrate to block the C-Halo region and a gate region. A gate(155) is formed by etching the gate material layer and removing the second photoresist pattern.
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