| 摘要 |
<p>There are provided a nitride semiconductor device having a structure capable of improving crystallinity of grown nitride semiconductor, carrying out easily removing a substrate, and dividing into chips very easily, by using zinc oxide based compound having excellent processability as a substrate, and a method for manufacturing the same. In case that a nitride semiconductor device is formed by laminating nitride semiconductor layers on a substrate (1), the substrate (1) is made of Mg x Zn 1-x O (0<x‰¦0.5), a first nitride semiconductor layer (2) made of In y Ga 1-y N (0‰¦y‰¦0.5) is provided in contact with the substrate, and nitride semiconductor layers (3) to (7) are laminated on the first nitride semiconductor layer so as to form the semiconductor device.</p> |
