SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

摘要

A semiconductor device and a method for manufacturing the same are provided to reduce a degree of difficulty in a lithography by implanting impurity ions into a desired part of a second hard mask. A first hard mask is formed on an etching member. A second hard mask(40B) is formed on the first hard mask. Ions are implanted into a part of the second hard mask and a modification process is performed to vary an etch rate for wet etching in comparison with a non-ion-implanted part. The first hard mask is etched by using the second hard mask as a mask. The non-ion-implanted part of the second hard mask is removed by performing a selective etch process. A sidewall layer(70) is formed on a sidewall of the first hard mask. A selective etch process is performed to remove an exposed top part of the first hard mask which is not covered with the second hard mask.