PHASE CHANGE MEMORY CELL HAVING STEP-LIKE PROGRAMMING CHARACTERISTIC

摘要

A phase change memory cell having step-like programming characteristics is provided to provide a specific resistance value reliably and repetitively by programming a selected number of steps of a phase change material in a step-like pattern. A memory cell includes a first electrode(202), a second electrode(206) and a phase change material(204) between the first electrode and the second electrode. The phase change material has step-like programming characteristics. The phase change material forms a step-like pattern. The phase change material includes a plurality of rectangular or cylindrical parts. The memory cell further includes an insulation material(208) surrounding the phase change material, the first electrode and the second electrode laterally.