| 摘要 |
A DRAM(Dynamic Random Access Memory) device and a forming method thereof are provided to secure process margin of a photolithography process and to minimize decrease of productivity by using a first node, a second node, and bit line pad mask patterns as masks. First node pads(120a) and second node pads(120b) are arranged in turn along a first direction on a substrate to make a first pad row. Bit line pads(120c) are arranged along the first direction on the substrate to make a pair of second pad rows. The pair of second pad rows are respectively arranged at both sides of the first pad row. Storage electrodes are respectively connected to the first node pads and the second node pads within the first pad row. A width toward a second direction perpendicular to the first direction of the second node pad is larger than a width toward the second direction of the first node pad. A width toward the first direction of the first node pad is identical to a width toward the first direction of the second node pad.
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