发明名称 |
Methods of fabricating integrated circuit devices having contact holes exposing gate electrodes in active regions |
摘要 |
Integrated circuit devices are provided including an integrated circuit substrate and first, second and third spaced apart insulating regions in the integrated circuit substrate that define first and second active regions. A first gate electrode is provided on the first active region. The first gate electrode has a first portion on the first active region that extends onto the first insulating region and a second portion at an end of the first portion on the first insulating region. A second gate electrode is provided on the second active region. An insulating layer is provided on the first, second and third active regions defining a first gate contact hole that exposes at least a portion of the second portion of the first gate electrode. The first gate electrode is free of a gate contact hole on the first portion of the first gate electrode. A second gate contact hole is provided on the second active region that exposes at least a portion of the second gate electrode. Related methods of fabricating integrated circuit devices are also provided.
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申请公布号 |
US7320909(B2) |
申请公布日期 |
2008.01.22 |
申请号 |
US20060359840 |
申请日期 |
2006.02.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
PARK JEUNG-HWAN;CHO MYOUNG-KWAN |
分类号 |
H01L21/337;H01L27/04;H01L21/8234;H01L27/02;H01L27/105;H01L27/148;H01L29/78 |
主分类号 |
H01L21/337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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