发明名称 Bias circuit and method of producing semiconductor device
摘要 A bias circuit able to keep a bias current constant even if a threshold voltage of a transistor changes, provided with a resistance element connected between a bias voltage supply line and a gate and changing in resistance value linked with the threshold value of the transistor. Even if the threshold value of the transistor changes, the resistance value changes in response to the change of the threshold value. When the threshold voltage increases, the resistance value decreases and the bias voltage is adjusted by resistance division to increase. When the threshold voltage decreases, the resistance value increases and the bias voltage is adjusted by resistance division to decrease. The transistor is a junction type transistor having a first conductivity type channel and a second conductivity type gate. The resistance element is formed in the second conductivity type semiconductor region.
申请公布号 US7321251(B2) 申请公布日期 2008.01.22
申请号 US20040878010 申请日期 2004.06.29
申请人 SONY CORPORATION 发明人 NAKAMURA MITSUHIRO
分类号 H01L27/04;H03L5/00;G06G7/12;H01L21/06;H01L21/335;H01L21/338;H01L21/822;H01L21/8232;H01L27/06;H01L27/095;H01L29/778;H01L29/812;H03F1/30;H03F3/16 主分类号 H01L27/04
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