发明名称 Voltage reference generator circuit using low-beta effect of a CMOS bipolar transistor
摘要 A voltage reference generator has been discovered that generates a stable reference voltage that is less than the bandgap voltage of silicon for power supply voltages less than 2V, yet provides sufficient voltage headroom to operate a cascaded current mirror. In one embodiment, the voltage reference generator has a power supply rejection ratio of at least 60 dB and has improved noise performance as compared to traditional bandgap circuits. These advantages are achieved by leveraging the low-beta effect of a CMOS bipolar transistor to generate a current proportional to an absolute temperature.
申请公布号 US7321225(B2) 申请公布日期 2008.01.22
申请号 US20040813837 申请日期 2004.03.31
申请人 SILICON LABORATORIES INC. 发明人 GARLAPATI AKHIL K.;DEL SIGNORE BRUCE P.;PIETRUSZYNSKI DAVID
分类号 G05F3/16;G05F3/26;G05F3/30 主分类号 G05F3/16
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