发明名称 |
Voltage reference generator circuit using low-beta effect of a CMOS bipolar transistor |
摘要 |
A voltage reference generator has been discovered that generates a stable reference voltage that is less than the bandgap voltage of silicon for power supply voltages less than 2V, yet provides sufficient voltage headroom to operate a cascaded current mirror. In one embodiment, the voltage reference generator has a power supply rejection ratio of at least 60 dB and has improved noise performance as compared to traditional bandgap circuits. These advantages are achieved by leveraging the low-beta effect of a CMOS bipolar transistor to generate a current proportional to an absolute temperature.
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申请公布号 |
US7321225(B2) |
申请公布日期 |
2008.01.22 |
申请号 |
US20040813837 |
申请日期 |
2004.03.31 |
申请人 |
SILICON LABORATORIES INC. |
发明人 |
GARLAPATI AKHIL K.;DEL SIGNORE BRUCE P.;PIETRUSZYNSKI DAVID |
分类号 |
G05F3/16;G05F3/26;G05F3/30 |
主分类号 |
G05F3/16 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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