| 摘要 |
A method for forming a resistor of high value in a semiconductor substrate including forming a stack of a first insulating layer, a first conductive layer, a second insulating layer, and a third insulating layer, the third insulating layer being selectively etchable with respect to the second insulating layer; etching the stack, to expose the substrate and keep the stack in the form of a line; forming insulating spacers on the lateral walls of the line; performing an epitaxial growth of a single-crystal semiconductor on the substrate, on either side of the line; selectively removing the third insulating layer to partially expose the second insulating layer at a predetermined location; and depositing and etching a conductive material to fill the cavity formed by the previous removal of the third insulating layer.
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