发明名称 |
Trench capacitors with buried isolation layer formed by an oxidation process and methods for manufacturing the same |
摘要 |
A method for forming a trench capacitor includes: removing a portion of the substrate to form a trench within the substrate; forming at a buried isolation layer within the substrate; forming in the substrate a first electrode of the trench capacitor at least in areas surrounding a lower portion of the trench; forming a dielectric layer of the trench capacitor; and forming a second electrode of the trench capacitor in the trench. The buried isolation layer intersects with the trench and has one or more gaps for providing body contact between a first substrate area above the buried isolation layer and a second substrate area below the buried isolation layer.
|
申请公布号 |
US7320912(B2) |
申请公布日期 |
2008.01.22 |
申请号 |
US20050125676 |
申请日期 |
2005.05.10 |
申请人 |
PROMOS TECHNOLOGIES INC. |
发明人 |
LEE YUEH-CHUAN;TUNG MING-SHENG |
分类号 |
H01L21/8242 |
主分类号 |
H01L21/8242 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|