发明名称 |
POLYMER MEMORY DEVICE AND METHOD FOR FORMING THEREOF |
摘要 |
<p>A polymer memory device and a forming method thereof are provided to arrange two or more date storage regions vertically by laminating hardening polymer layers. A first electrode is arranged on a substrate(1). A first hardening polymer layer(15) covers the first electrode. A second electrode(21) intersected with the second electrode is formed on the first hardening polymer layer. A second hardening polymer layer(25) covers the second electrode. A third electrode(31) intersected with the second electrode is formed on the second hardening polymer. The first hardening polymer layer and the second hardening polymer layer respectively include fullerene or fullerene derivatives. The first and second hardening polymer layers respectively include polyimide layers. The polyimide layer includes a BPDA-PPD(4,4'-biphthalic dianhydride p-phenylene diamine) polyimide layer. The fullerene derivative includes PCBM([6,6]-phenyl C61 butyric acid methyl ester).</p> |
申请公布号 |
KR100796643(B1) |
申请公布日期 |
2008.01.22 |
申请号 |
KR20060097324 |
申请日期 |
2006.10.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, BYEONG OK;TAKAHIRO YASUE;LEE, MOON SOOK |
分类号 |
H01L27/108;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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