发明名称 Multi-elevation singulation of device laminates in wafer scale and substrate processing
摘要 Wafer scale and substrate processing device singulation methods, and devices made by the methods, for singulation of discrete devices from a processed wafer or laminated structures, involves formation of separation scribes or saw cuts at multiple elevations in intersecting scribe streets or lines so that a separation cut in one direction is at a different depth than a separation cut in a different and intersecting direction. Separation or fracture of the wafer or laminated structure along one of the separation cuts does not transfer to the separation line of the intersecting separation cut due to the difference in depth of the intersecting cuts or scribes, and due to the difference in elevation of the bottom surfaces of the cuts or scribes within the scribe streets, resulting in cleaner edges on the separated devices.
申请公布号 US7320930(B2) 申请公布日期 2008.01.22
申请号 US20040828110 申请日期 2004.04.19
申请人 HANA MICRODISPLAY TECHNOLOGIES, INC. 发明人 ESHLEMAN DEAN
分类号 H01L21/46;H01L21/78;H01L29/74 主分类号 H01L21/46
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