| 摘要 |
A method of forming a contact between a bitline and a local interconnect in a flash memory device comprises forming a hard mask layer on a planarized surface that includes an exposed top section of the local interconnects prior to depositing an oxide dielectric layer. The hard mask layer may be composed of a material that has an etch resistance as compared to the interlayer dielectric material, e.g., nitride. Openings in the hard mask define positions for the contacts to the local interconnects exposed in the top section.
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