发明名称 |
Semiconductor laser device and method for fabricating the same |
摘要 |
A semiconductor laser device of the present invention includes: an active layer formed on a substrate; a first semiconductor layer formed on the active layer and made of a nitride semiconductor of a first conductivity type; a multilayer film formed on the first semiconductor layer and having a groove; and a second semiconductor layer formed on the multilayer film to fill the groove and made of a nitride semiconductor of the first conductivity type. The multilayer film is composed of a plurality of thin films containing a nitride semiconductor of a second conductivity type, and one of the thin films formed as the uppermost film is made of gallium nitride.
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申请公布号 |
US7320898(B2) |
申请公布日期 |
2008.01.22 |
申请号 |
US20050154547 |
申请日期 |
2005.06.17 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
TAMURA SATOSHI;IKEDO NORIO |
分类号 |
H01L21/00;H01L29/06;H01S5/20;H01S5/22;H01S5/343 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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