| 摘要 |
In a method of manufacturing a variable capacitance diode according to the present invention, a mask is formed on a semiconductor substrate of a first conductive type having a low impurity concentration, a semiconductor region of the first conductive type having an intermediate impurity concentration is formed on the semiconductor substrate by means of ion implantation via an opening portion of the mask, a semiconductor region of a second conductive type having a high impurity concentration is formed in the semiconductor substrate on a surface side thereof relative to the semiconductor region of the first conductive type having the intermediate impurity concentration via the same opening portion of the mask, and the semiconductor region of the first conductive type having the intermediate impurity concentration and the semiconductor region of the second conductive type having the high impurity concentration are activated by applying a heat treatment to the semiconductor substrate. In a variable capacitance diode according to the present invention, a structure in which an annular contact layer of a first conductive type is formed in a periphery of a semiconductor region of a second conductive type having a high impurity concentration constitutes each of a plurality of units and the plurality of units is disposed in an array.
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