| 摘要 |
<p>A thin film transistor and a manufacturing method thereof are provided to confirm an LDD(Lightly Doped Drain) overlay without double measurement and additional calculation by forming a transparent conductive layer having degeneration regions(121a,121b) whose transmittances are reduced. A semiconductor layer(110) is formed on a substrate. A transparent conductive layer(120) is formed on a layer same as the semiconductor layer. A gate dielectric(101) is formed on the entire surface of an upper portion of the substrate. A high concentration impurity is implanted into the semiconductor layer to form source/drain regions(111a,111b). The high concentration impurity is implanted into the transparent conductive layer to form degeneration regions(121a,121b) whose transmittances are reduced. A gate electrode(140a) is formed on a region corresponding to a part of the semiconductor layer. The gate electrode is located on the gate dielectric. A conductive pattern(140b) is formed on the upper portion of the transparent conductive layer on a layer same as the gate electrode. A low concentration impurity is implanted into the semiconductor layer to form LDD regions(112a,112b).</p> |
