| 摘要 |
<p>A method for fabricating a semiconductor device is provided to form a trench pattern of high resolution at minimum pitch by performing exposure and etching processes on first and second photoresist, respectively. An exposure process is performed on a semiconductor substrate(200) having a first photoresist formed in one external direction of a trench pattern to be formed. A dry etching process is performed on the first photoresist. An exposure process is performed on the semiconductor substrate having second photoresist(230,231) in the other external direction of the trench pattern. A dry etching process is performed on the second photoresist.</p> |
