METHOD OF FORMING MIM CAPACITOR

摘要

A method for forming an MIM capacitor is provided to improve characteristics of a semiconductor device by depositing a high dielectric material for increasing precision of a device. A lower electrode(10) is formed on a substrate of a semiconductor device including silicon by using an atomic deposition method. A surface stabilization layer including noble metals is formed on the lower electrode by using the atomic deposition method. A dielectric layer(20) including a dielectric material is formed on the surface stabilization layer by using the atomic deposition method. A surface stabilization layer(40) including noble metals is formed on the dielectric layer. An upper electrode(30) is formed on the surface stabilization layer by using the atomic deposition method. The surface stabilization layer is formed by using one or two and more elements of Pt, Ru, Rh, Pd, Ag, W, Ni, Co, Fe, and Ir.