| 摘要 |
A method for testing a semiconductor device is provided to improve the overlay alignment by forming a WIS mark and finding an accurate WIS value using the WIS mark, thereby reducing a process defective. An X WIS mark for measuring WIS(Wafer Induced Shift) of an X-axial direction and a Y WIS mark for measuring WIS of a Y-axial direction are formed on a chip of a wafer. The WIS is measured on each WIS mark, and then WIS values of X-axial and Y-axial directions are induced. In the step of forming the WIS mark, a contact(120) having relatively wide width is formed in a WIS mark formation region. When an upper line pattern(110) is formed, a line pattern extending in the Y-axial direction is overlapped over a center of the contact.
|
