| 摘要 |
<p>A method for forming a low-k dielectric layer and a structure thereof are provided to capture fluoric elements diffused from an FSG layer by forming a BSG layer including Boron on a lower interlayer dielectric. A second lower interlayer dielectric(23) including a P type dopant is formed on an upper surface of a first lower interlayer dielectric(21,22). A first copper wiring is formed in the first and second lower interlayer dielectrics. A capping layer(24) is formed on the second lower interlayer dielectric having the first copper wiring. An upper interlayer dielectric(25) including fluorine is formed on the capping layer. A second copper wiring(27) is formed on the upper interlayer dielectric. The second lower interlayer dielectric is formed with a BSG layer. The BSG layer is formed by using O2, TEOS, and TEB as reaction gas.</p> |
