| 摘要 |
A ferroelectric capacitor (42) is formed above a semiconductor substrate (10), and a barrier film (46) for directly covering the ferroelectric capacitor (42) is formed. Then, an interlayer insulating film (48) is formed and flattened. Then, an inclined groove is formed on the interlayer insulating film (48), and a barrier film (50) is formed over the entire surface.
|
