发明名称 SOLUTION TREATMENT METHOD AND SOLUTION TREATMENT UNIT
摘要 <p>A solution treatment method and a solution treatment unit are provided to maintain a temperature distribution of a surface of substrate uniformly by preventing impurities from being adhered to a substrate. A solution treatment method includes the steps of: supplying a gas from an upper part of a vessel inside a casing; adjusting a first flow rate of the supplied gas flowing into the vessel and a second flow rate of the supplied gas flowing out of the vessel; and exhausting the gas flown into the vessel and the gas flown out of the vessel outside the casing, wherein the solution treatment is a developing process. The first flow rate is adjusted to be smaller than the second flow rate during a substrate process by supplying a treating solution onto the substrate.</p>
申请公布号 KR20080007413(A) 申请公布日期 2008.01.18
申请号 KR20080000876 申请日期 2008.01.03
申请人 TOKYO ELECTRON LIMITED 发明人 NAGAMINE SHUICHI
分类号 G03F7/30;H01L21/027;H01L21/00 主分类号 G03F7/30
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