Semiconductor manufacturing method and semiconductor laser device manufacturing method

摘要

There are provided preflow periods t 11 , t 12 in which group III element materials TMG, TMA and TMI are not supplied from a group III element material container to a reaction region (reactor), while a group V element material PH₃ and an Mg dopant material are supplied from a group V element material container and a dopant material container to the reaction region (reactor) after an Mg-undoped group III-V compound semiconductor layer is crystallinically grown and before an Mg-doped group III-V compound semiconductor layer is crystallinically grown. According to the semiconductor manufacturing method, an Mg doping profile can be accurately controlled.