发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a radio communication apparatus capable of making satisfactory gain and noise characteristics in high frequency bands. <P>SOLUTION: The radio communication circuit device relates to a radio communication apparatus that includes an IC chip in which a transmission/reception IC is integrated, while includes a low-noise amplifier (LNA) constituted of a transistor, wherein a plurality of electrode terminals (pads) are provided along with edges of sides of a principal surface of the chip but no other wiring across wiring connecting an emitter; a base and a collector of the transistor constituting the LNA is provided between the pads and the emitter, base and collector, so that wiring connectings to the emitter, base and collector can be shortened and the capacity can be reduced. Furthermore, wiring a power line or a ground line is not provided in between the sides of the chip and the pads. Thus, the length of a wire, connecting the pad and a lead, can be shortened. The LNA is disposed near the center of one side of the chip. As a result, a short lead can be used. Accordingly, gain/noise characteristics become satisfactory. <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008011561(A) 申请公布日期 2008.01.17
申请号 JP20070216556 申请日期 2007.08.23
申请人 RENESAS TECHNOLOGY CORP 发明人 TAKIGAWA KUMIKO;TANAKA SATOSHI;TASHIRO YOSHIYASU
分类号 H04B1/18;H01L21/822;H01L27/04 主分类号 H04B1/18
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