| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a resist protective film material that reliably gives a resist pattern having a preferable rectangle even when a protective film is formed on a photoresist film, and to provide a method for forming a pattern using the above material. <P>SOLUTION: The resist protective film material contains at least a high molecular compound expressed by general formula (1) having an amino group or a sulfonamide group at a polymerization end. The method for forming a pattern includes at least steps of: forming a photoresist film on a substrate; forming a resist protective film on the photoresist film by using the above resist protective film material; exposing; and developing by use of a developer solution. <P>COPYRIGHT: (C)2008,JPO&INPIT |
