| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device by which performance degradation in a ferroelectric capacitor due to ingress of moisture or hydrogen is prevented without fail, and increase of the number of manufacturing processes can be avoided; and to provide a method for manufacturing it. <P>SOLUTION: After a transistor T is formed on a semiconductor substrate 110, a first insulating film 121 is formed. Then the ferroelectric capacitor 130 is formed on the first insulating film 121, and a second insulating film 131a is formed thereon. Then, after an upper surface of the second insulating film 131a is planarized, a contact hole to the impurity region 118 of the transistor T is formed, and a conductor is embedded in the contact hole to form a plug 133. Then a hydrogen barrier layer 134 is formed of an aluminum oxide, etc., and a third insulating film 131b is formed thereon. Then, after a contact hole is formed for connecting to the ferroelectric capacitor 130 and the plug 133, a conductor is embedded in the contact hole to form a wiring 137. <P>COPYRIGHT: (C)2008,JPO&INPIT</p> |
