发明名称 ELECTROSTATIC DISCHARGE PROTECTIVE CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT USING THE SAME
摘要 An electrostatic discharge protective circuit including an ESD protective circuit which has a trigger terminal and forms a discharge path from a first node to a second node when trigger signals are supplied to the trigger terminal, a trigger circuit included in a circuit to be protected which is connected between the first and second nodes, the trigger circuit having a first MOS device, and which functions as a part of the circuit to be protected at the time of normal operation when ESD voltage is not applied, and forms a conductive path between a drain and source of the MOS device when ESD voltage of a predetermined value or more is applied to the first node during a normal operation, and supplying the trigger signals to the trigger terminal of the ESD protective circuit when the first MOS device becomes conductive.
申请公布号 US2008013232(A1) 申请公布日期 2008.01.17
申请号 US20070776528 申请日期 2007.07.11
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SATO KOICHI
分类号 H01L27/04;H02H9/00;H01L21/822;H01L23/60;H01L27/02 主分类号 H01L27/04
代理机构 代理人
主权项
地址