发明名称 |
Method of heating semiconductor wafer to improve wafer flatness |
摘要 |
A method of heating-treating a semiconductor wafer is provided. In one embodiment, a first layer is formed over a first side of a substrate. A second layer is formed over the first layer and over a second side of the substrate and the wafer is then flash annealed. In another embodiment, a first layer is formed over a first side of a substrate and over a second side of the substrate. A second layer is formed over the first layers and the wafer is then flash annealed.
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申请公布号 |
US2008014763(A1) |
申请公布日期 |
2008.01.17 |
申请号 |
US20060486098 |
申请日期 |
2006.07.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LU HSIAO-TZU;LIN BURN-JENG;LIN CHIN-HSIANG;CHEN KUEI-SHUN;GAU TSAI-SHENG |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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