| 摘要 |
<p>In a method for reusing removed wafers, re-processing of at least polishing is performed to a removed wafer (17) obtained as by-product when an SOI wafer is manufactured by ion implanting removal method, and the removed wafer (17) is reused as a bond wafer (21) in SOI wafer manufacturing process. In the method, at least a CZ wafer (11) to be used as a bond wafer is formed as a low-defectivity wafer having an N region over the entire surface, and in the re-processing, RTA processing is performed to the removed wafer (17), at a temperature higher than that in formation of a thermally oxidized film (12) on the bond wafer in the SOI wafer manufacturing process. Thus, even when a removed wafer, which is obtained as a byproduct when a CZ wafer having a large diameter of 200mm or more is used as a bond wafer and an SOI wafer is manufactured by ion implanted removal method, is reused as a bond wafer, bonding failures and deterioration of SOI layer qualities are not induced.</p> |
