发明名称 METHOD OF MANUFACTURING SUBSTRATE AND VAPOR DEPOSITION APPARATUS USED THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing a substrate for safely and inexpensively manufacturing a fine copper layer high in copper purity and suitable for semiconductor substrates, electronic substrates or the like, and a vapor deposition apparatus used therefor. SOLUTION: The method of manufacturing substrate is for manufacturing a substrate containing a base material and the copper layer formed on the base material, and includes: a step for arranging a copper layer-forming material containing a constituent material for the copper layer and the base material such that the base material is opposed to the copper layer-forming material on the vertically upper side of the copper layer-forming material; and a step for forming the copper layer on the base material by vapor deposition of copper by heating the copper layer-forming material to the temperature range of 90-200°C and the base material to the temperature range of 120-450°C. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2008007852(A) 申请公布日期 2008.01.17
申请号 JP20070127178 申请日期 2007.05.11
申请人 MEC KK 发明人 OTANI MINORU;MORINAGA YUKARI
分类号 C23C16/16;H01L21/285;H05K3/00 主分类号 C23C16/16
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