| 发明名称 |
TRANSPARENT CONDUCTIVE FILM, SEMICONDUCTOR DEVICE AND ACTIVE MATRIX DISPLAY UNIT |
| 摘要 |
A transparent conductive film substantially made from In<SUB>2</SUB>O<SUB>3</SUB>, SnO<SUB>2 </SUB>and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.
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| 申请公布号 |
US2008012016(A1) |
申请公布日期 |
2008.01.17 |
| 申请号 |
US20070767217 |
申请日期 |
2007.06.22 |
| 申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
INOUE KAZUNORI;ISHIGA NOBUAKI;NAGAYAMA KENSUKE;TAKEGUCHI TORU;KAWASE KAZUMASA |
| 分类号 |
C22C21/00;C22C27/04;C23C14/06;C23C14/08;G02F1/1362;H01B1/02;H01B1/08;H01B5/14;H01L21/336;H01L29/786 |
主分类号 |
C22C21/00 |
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