| 摘要 |
<p>A method for fabricating a phase change memory device is provided to prevent a change of composition of phase change material layer patterns by suppressing the damage of the phase change material layer patterns. A phase change material layer is formed on a semiconductor substrate(100) in order to be connected to a selective element. A phase change material layer pattern(151) is formed by etching the phase change material layer. In the etch process, a gas including components of the phase change material layer is mixed with an etch gas. The phase change material layer includes GaSb, InSb, InSe, Sb2Te3, GeTe, GeSbTe, InSbTe, SnSb2Te4, InSbGe, AgInSbTe, (GeSn)SbTe, GeSb(SeTe), and Te81Ge15Sb2S2. The phase change material layer includes Ge, Sb, and Te.</p> |
